description: the central semiconductor cmpd6001 series types are silicon switching diodes manu- factured by the epitaxial planar process, designed for switching applications requiring a extremely low leakage diode. the following configurations are available: maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 100 v continuous forward current i f 250 ma peak repetitive forward current i frm 250 ma forward surge current, tp=1 sec. i fsm 4000 ma forward surge current, tp=1 sec. i fsm 1000 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =75v 500 pa v br i r =100a 100 v v f i f =1.0ma 0.85 v v f i f =10ma 0.95 v v f i f =100ma 1.1 v c t v r =0, f =1.0 mhz 2.0 pf t rr i r =i f =10ma, r l =100 ? , rec. to 1.0ma 3.0 s cmpd6001 cmpd6001a cmpd6001c CMPD6001S surface mount low leakage switching diode sot-23 case central semiconductor corp. tm r1 ( 01-mar 2001) cmpd6001 single marking code: ulo cmpd6001a dual, common anode marking code: ula cmpd6001c dual, common cathode marking code: ulc CMPD6001S dual, in series marking code: uls
central semiconductor corp. tm sot-23 case - mechanical outline cmpd6001 cmpd6001a cmpd6001c CMPD6001S surface mount low leakage switching diode pin configuration r1 ( 01-mar 2001) cmpd6001c CMPD6001S cmpd6001 cmpd6001a n.c. a c a1, a2 a2 c2 c1 a1 c1, c2 c1 a2 a1, c2
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